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| SMBT2222A/ MMBT2222A NPN Silicon Switching Transistor High DC current gain: 0.1mA to 500 mA Low collector-emitter saturation voltage Complementary type: SMBT2907A (PNP) 3 2 1 VPS05161 Type SMBT2222A/ MMBT2222A Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Marking s1P 1=B Pin Configuration 2=E 3=C Package SOT23 Symbol VCEO VCBO VEBO IC Ptot Tj Tstg Value 40 75 6 600 330 150 -65 ... 150 Unit V mA mW C Total power dissipation, TS = 77 C Junction temperature Storage temperature Thermal Resistance Junction - soldering point 1) RthJS 220 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Feb-18-2002 SMBT2222A/ MMBT2222A Electrical Characteristics at TA = 25C, unless otherwise specified Symbol Values Parameter min. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 Collector-base breakdown voltage IC = 10 A, IE = 0 Emitter-base breakdown voltage IE = 10 A, IC = 0 Collector cutoff current VCB = 60 V, IE = 0 Collector cutoff current VCB = 60 V, IE = 0 , TA = 150 C Emitter cutoff current VEB = 3 V, IC = 0 DC current gain 1) IC = 100 A, VCE = 10 V IC = 1 mA, VCE = 10 V IC = 10 mA, VCE = 10 V IC = 150 mA, VCE = 1 V IC = 150 mA, VCE = 10 V IC = 500 mA, VCE = 10 V IC = 10 mA, VCE = 10 V, TA = 55C Collector-emitter saturation voltage1) IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA Base-emitter saturation voltage 1) IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA VBEsat 0.6 1.2 2 VCEsat 0.3 1 hFE 35 50 75 50 100 40 35 300 V IEBO 10 nA ICBO 10 A ICBO 10 nA V(BR)EBO 6 V(BR)CBO 75 V(BR)CEO 40 V typ. max. Unit 1) Pulse test: t =300s, D = 2% 2 Feb-18-2002 SMBT2222A/ MMBT2222A Electrical Characteristics at TA = 25C, unless otherwise specified Symbol Values Parameter min. AC Characteristics Transition frequency IC = 20 mA, VCE = 20 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure IC = 100 A, VCE = 10 V, RS = 1 k, Short-circuit input impedance IC = 1 mA, VCE = 10 V, f = 1 kHz IC = 10 mA, VCE = 10 V, f = 1 kHz Open-circuit reverse voltage transf.ratio IC = 1 mA, VCE = 10 V, f = 1 kHz IC = 10 mA, VCE = 10 V, f = 1 kHz Short-circuit forward current transf.ratio IC = 1 mA, VCE = 10 V, f = 1 kHz IC = 10 mA, VCE = 10 V, f = 1 kHz Open-circuit output admittance IC = 1 mA, VCE = 10 V, f = 1 kHz IC = 10 mA, VCE = 10 V, f = 1 kHz Delay time VCC = 30 V, IC = 150 mA, IB1 = 15 mA, VBE(off) = 0.5 V Rise time VCC = 30 V, IC = 150 mA, IB1 = 15 mA, VBE(off) = 0.5 V tr td h22e 5 25 35 200 10 ns h21e 50 75 300 375 S h12e 8 4 F f = 200 Hz h11e 2 0.25 8 1.25 10-4 k 4 dB Ceb 25 Ccb 8 pF fT 300 MHz typ. max. Unit - 25 Storage time VCC = 30 V, IC = 150 mA, IB1 =IB2 = 15mA Fall time VCC = 30 V, IC = 150 mA, IB1 =IB2 = 15mA 3 tstg tf - - 225 60 Feb-18-2002 f = 1 kHz, ns ns SMBT2222A/ MMBT2222A Test circuits Delay and rise time 30 V 200 Osc. 9.9 V 0 619 0.5 V EHN00055 Storage and fall time 30 V ~100 s < 5 ns 16.2 V 0 -13.8 V ~ 500 s -3.0 V EHN00056 200 Osc. 1 k Oscillograph: R > 100, C < 12pF, tr < 5ns 4 Feb-18-2002 SMBT2222A/ MMBT2222A Total power dissipation Ptot = f(TS) Collector-base capacitance CCB = f (VCB) f = 1MHz 360 mW 10 2 pF Ccb 5 SMBT 2222/A EHP00739 300 270 Ptot 240 210 180 150 120 90 60 30 0 0 15 30 45 60 75 90 105 120 10 1 5 C 150 TS 10 0 10 -1 5 10 0 5 10 1 V 10 2 V CB Permissible pulse load Ptotmax / PtotDC = f (tp ) 10 3 Ptot max 5 Ptot DC SMBT 2222/A EHP00740 Transition frequency fT = f (IC) VCE = 20V 10 3 fT T SMBT 2222/A EHP00741 tp D= T tp MHz 10 2 5 10 1 5 D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 2 10 2 5 2 10 0 10 -6 10 -5 10 -4 10 -3 10 -2 s tp 10 0 101 10 0 5 10 1 5 10 2 mA 5 10 3 C 5 Feb-18-2002 SMBT2222A/ MMBT2222A Saturation voltage IC = f (VBEsat , VCEsat) hFE = 10 10 3 mA SMBT 2222/A EHP00742 DC current gain hFE = f (IC ) VCE = 10V 10 3 SMBT 2222/A EHP00743 C 10 2 5 VCE VBE h FE 5 150 C 25 C 10 1 5 10 2 -50 C 5 10 0 5 10 -1 0 0.2 0.4 0.6 0.8 1.0 V 1.2 10 1 -1 10 10 0 10 1 VBE sat , VCE sat 10 C 2 mA 10 3 Delay time td = f (IC ) Rise time tr = f (IC) 10 3 ns td,tr 5 VCC = 30 V h FE = 10 tr 10 2 tr V = 5 V BE SMBT 2222/A EHP00744 Storage time tstg = f (IC ) Fall time 10 3 ns t s, t f 5 tf = f (IC) EHP00745 SMBT 2222/A ts 10 2 h FE = 10 5 VBE = 2 V td td 5 tf h FE = 10 h FE = 20 VBE = 0 V 10 1 10 0 5 10 1 5 10 2 mA 5 C 10 3 10 1 1 10 5 10 2 mA 5 10 3 C 6 Feb-18-2002 |
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